Texte vergleichen

Finden Sie den Unterschied zwischen zwei Textdateien

Real-time diff

Unified diff

Collapse lines

Highlight change

Syntax highlighting

Onlinewerkzeuge

Diffchecker Desktop The most secure way to run Diffchecker. Get the Diffchecker Desktop app: your diffs never leave your computer!Get Desktop

RAM Check

Created 5 years agoDiff never expires

Lines
Total
Removed

Words
Total
Removed

To continue using this feature, upgrade to Diffchecker Pro View Pricing

84 lines

Lines
Total
Added

Words
Total
Added

To continue using this feature, upgrade to Diffchecker Pro View Pricing

General Module Information

Module Number: 2

Module Number: 1

Module Size: 8 GBytes

Memory Type: DDR3 SDRAM

Module Type: Unbuffered DIMM (UDIMM)

Memory Speed: 800.0 MHz (DDR3-1600 / PC3-12800)

Module Manufacturer: Corsair

Module Part Number: CMZ16GX3M2A1600C10

Module Part Number: CML16GX3M2A1600C10

Module Revision: 0

Module Serial Number: 0

Module Manufacturing Date: Year: 2000, Week: 0

Module Manufacturing Date: Year: 200c, Week: 1e

Module Manufacturing Location: 1

SDRAM Manufacturer: Unknown

Error Check/Correction: None

Module characteristics

Row Address Bits: 16

Column Address Bits: 10

Number Of Banks: 8

Module Density: 4096 Mb

Number Of Ranks: 2

Device Width: 8 bits

Bus Width: 64 bits

Module Nominal Voltage (VDD): 1.5 V

Module timing

Minimum SDRAM Cycle Time (tCKmin): 1.250 ns

Minimum SDRAM Cycle Time (tCKmin): 1.500 ns

CAS# Latencies Supported: 6, 7, 9, 10

CAS# Latencies Supported: 5, 6, 8, 9

Minimum CAS# Latency Time (tAAmin): 12.500 ns

Minimum CAS# Latency Time (tAAmin): 13.125 ns

Minimum RAS# to CAS# Delay (tRCDmin): 12.500 ns

Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns

Minimum Row Precharge Time (tRPmin): 12.500 ns

Minimum Row Precharge Time (tRPmin): 13.125 ns

Minimum Active to Precharge Time (tRASmin): 33.750 ns

Minimum Active to Precharge Time (tRASmin): 36.000 ns

Supported Module Timing at 800.0 MHz: 10-10-10-27

Supported Module Timing at 666.7 MHz: 9-9-9-24

Supported Module Timing at 666.7 MHz: 9-9-9-23

Supported Module Timing at 400.0 MHz: 6-6-6-15

Supported Module Timing at 533.3 MHz: 7-7-7-18

Supported Module Timing at 333.3 MHz: 5-5-5-12

Minimum Write Recovery Time (tWRmin): 15.000 ns

Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns

Minimum Active to Active/Refresh Time (tRCmin): 48.125 ns

Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns

Minimum Refresh Recovery Time Delay (tRFCmin): 260.000 ns

Minimum Refresh Recovery Time Delay (tRFCmin): 300.000 ns

Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns

Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns

Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns

Features

Partial Array Self Refresh (PASR): Supported

On-die Thermal Sensor (ODTS) Readout: Not Supported

Auto Self Refresh (ASR): Not Supported

Extended Temperature 1X Refresh Rate: Not Supported

Extended Temperature Range: Supported

Module Temperature Sensor: Not Supported

Pseudo Target Row Refresh (pTRR): Not Supported

Module Nominal Height: 29 - 30 mm

Module Maximum Thickness (Front): 2 - 3 mm

Module Maximum Thickness (Back): 2 - 3 mm

Intel Extreme Memory Profile (XMP)

XMP Revision: 1.3

Enthusiast / Certified Profile [Enabled]

Module VDD Voltage Level: 1.50 V

Memory Controller Voltage Level: 1.20 V

CAS# Latencies Supported: 6, 10

Minimum SDRAM Cycle Time (tCKmin): 1.250 ns (800.0 MHz)

Minimum CAS Latency Time (tAAmin): 12.500 ns

Minimum RAS# to CAS# Delay Time (tRCDmin): 12.500 ns

Minimum Row Precharge Delay Time (tRPmin): 12.500 ns

Minimum Active to Precharge Delay Time (tRASmin): 33.750 ns

Minimum CAS Write Latency Time (tCWLmin): 10.000 ns

Minimum Write Recovery Time (tWRmin): 15.000 ns

Minimum Write Recovery Time (tWRmin): 28.750 ns

Minimum Active to Active/Refresh Delay Time (tRCmin): 50.625 ns

Minimum Active to Active/Refresh Delay Time (tRCmin): 46.250 ns

Maximum tREFI Time (Average Periodic Refresh Interval): 7.750 us

Minimum Refresh Recovery Delay Time (tRFCmin): 260.000 ns

Minimum Internal Read to Precharge Command Delay Time (tRTPmin): 7.500 ns

Minimum Row Active to Row Active Delay Time (tRRDmin): 7.500 ns

Minimum Row Active to Row Active Delay Time (tRRDmin): 6.250 ns

Minimum Four Activate Window Delay Time (tFAWmin): 37.5 ns

Minimum Four Activate Window Delay Time (tFAWmin): 30.0 ns

Minimum Internal Write to Read Command Delay Time (tWTRmin): 7.500 ns

Supported Module Timing at 800.0 MHz: 10-10-10-27

Read to Write CMD Turn-around Time Optimization: No adjustment

Write to Read CMD Turn-around Time Optimization: No adjustment

Back 2 Back CMD Turn-around Time Optimization: No adjustment

System Command Rate Mode: 2N

Gespeicherten Diffs

Original text

Datei öffnen

General Module Information                                                      
Module Number:                                                                  2
Module Size:                                                                    8 GBytes
Memory Type:                                                                    DDR3 SDRAM
Module Type:                                                                    Unbuffered DIMM (UDIMM)
Memory Speed:                                                                   800.0 MHz (DDR3-1600 / PC3-12800)
Module Manufacturer:                                                            Corsair
Module Part Number:                                                             CMZ16GX3M2A1600C10
Module Revision:                                                                0
Module Serial Number:                                                           0
Module Manufacturing Date:                                                      Year: 2000, Week: 0
Module Manufacturing Location:                                                  1
SDRAM Manufacturer:                                                             Unknown
Error Check/Correction:                                                         None

Module characteristics                                                          
Row Address Bits:                                                               16
Column Address Bits:                                                            10
Number Of Banks:                                                                8
Module Density:                                                                 4096 Mb
Number Of Ranks:                                                                2
Device Width:                                                                   8 bits
Bus Width:                                                                      64 bits
Module Nominal Voltage (VDD):                                                   1.5 V

Module timing                                                                   
Minimum SDRAM Cycle Time (tCKmin):                                              1.250 ns
CAS# Latencies Supported:                                                       6, 7, 9, 10
Minimum CAS# Latency Time (tAAmin):                                             12.500 ns
Minimum RAS# to CAS# Delay (tRCDmin):                                           12.500 ns
Minimum Row Precharge Time (tRPmin):                                            12.500 ns
Minimum Active to Precharge Time (tRASmin):                                     33.750 ns

Supported Module Timing at 800.0 MHz:                                           10-10-10-27
Supported Module Timing at 666.7 MHz:                                           9-9-9-23
Supported Module Timing at 533.3 MHz:                                           7-7-7-18

Minimum Write Recovery Time (tWRmin):                                           15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin):                               6.000 ns
Minimum Active to Active/Refresh Time (tRCmin):                                 48.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin):                                  260.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin):                         7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin):                     7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin):                              30.000 ns

Features                                                                        
Partial Array Self Refresh (PASR):                                              Supported
On-die Thermal Sensor (ODTS) Readout:                                           Not Supported
Auto Self Refresh (ASR):                                                        Not Supported
Extended Temperature 1X Refresh Rate:                                           Not Supported
Extended Temperature Range:                                                     Supported
Module Temperature Sensor:                                                      Not Supported
Pseudo Target Row Refresh (pTRR):                                               Not Supported
Module Nominal Height:                                                          29 - 30 mm
Module Maximum Thickness (Front):                                               2 - 3 mm
Module Maximum Thickness (Back):                                                2 - 3 mm

Intel Extreme Memory Profile (XMP)                                              
XMP Revision:                                                                   1.3

Enthusiast / Certified Profile [Enabled]                                        
Module VDD Voltage Level:                                                       1.50 V
Memory Controller Voltage Level:                                                1.20 V
CAS# Latencies Supported:                                                       6, 10
Minimum SDRAM Cycle Time (tCKmin):                                              1.250 ns (800.0 MHz)
Minimum CAS Latency Time (tAAmin):                                              12.500 ns
Minimum RAS# to CAS# Delay Time (tRCDmin):                                      12.500 ns
Minimum Row Precharge Delay Time (tRPmin):                                      12.500 ns
Minimum Active to Precharge Delay Time (tRASmin):                               33.750 ns
Minimum CAS Write Latency Time (tCWLmin):                                       10.000 ns
Minimum Write Recovery Time (tWRmin):                                           15.000 ns
Minimum Active to Active/Refresh Delay Time (tRCmin):                           50.625 ns
Maximum tREFI Time (Average Periodic Refresh Interval):                         7.750 us
Minimum Refresh Recovery Delay Time (tRFCmin):                                  260.000 ns
Minimum Internal Read to Precharge Command Delay Time (tRTPmin):                7.500 ns
Minimum Row Active to Row Active Delay Time (tRRDmin):                          7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin):                              37.5 ns
Minimum Internal Write to Read Command Delay Time (tWTRmin):                    7.500 ns
Supported Module Timing at 800.0 MHz:                                           10-10-10-27
Read to Write CMD Turn-around Time Optimization:                                No adjustment
Write to Read CMD Turn-around Time Optimization:                                No adjustment
Back 2 Back CMD Turn-around Time Optimization:                                  No adjustment
System Command Rate Mode:                                                       2N

Geänderter text

Datei öffnen

General Module Information                                                      
Module Number:                                                                  1
Module Size:                                                                    8 GBytes
Memory Type:                                                                    DDR3 SDRAM
Module Type:                                                                    Unbuffered DIMM (UDIMM)
Memory Speed:                                                                   800.0 MHz (DDR3-1600 / PC3-12800)
Module Manufacturer:                                                            Corsair
Module Part Number:                                                             CML16GX3M2A1600C10
Module Revision:                                                                0
Module Serial Number:                                                           0
Module Manufacturing Date:                                                      Year: 200c, Week: 1e
Module Manufacturing Location:                                                  1
SDRAM Manufacturer:                                                             Unknown
Error Check/Correction:                                                         None

Module timing                                                                   
Minimum SDRAM Cycle Time (tCKmin):                                              1.500 ns
CAS# Latencies Supported:                                                       5, 6, 8, 9
Minimum CAS# Latency Time (tAAmin):                                             13.125 ns
Minimum RAS# to CAS# Delay (tRCDmin):                                           13.125 ns
Minimum Row Precharge Time (tRPmin):                                            13.125 ns
Minimum Active to Precharge Time (tRASmin):                                     36.000 ns

Supported Module Timing at 666.7 MHz:                                           9-9-9-24
Supported Module Timing at 400.0 MHz:                                           6-6-6-15
Supported Module Timing at 333.3 MHz:                                           5-5-5-12

Minimum Write Recovery Time (tWRmin):                                           15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin):                               6.000 ns
Minimum Active to Active/Refresh Time (tRCmin):                                 49.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin):                                  300.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin):                         7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin):                     7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin):                              30.000 ns

Intel Extreme Memory Profile (XMP)                                              
XMP Revision:                                                                   1.3

Enthusiast / Certified Profile [Enabled]                                        
Module VDD Voltage Level:                                                       1.50 V
Memory Controller Voltage Level:                                                1.20 V
CAS# Latencies Supported:                                                       6, 10
Minimum SDRAM Cycle Time (tCKmin):                                              1.250 ns (800.0 MHz)
Minimum CAS Latency Time (tAAmin):                                              12.500 ns
Minimum RAS# to CAS# Delay Time (tRCDmin):                                      12.500 ns
Minimum Row Precharge Delay Time (tRPmin):                                      12.500 ns
Minimum Active to Precharge Delay Time (tRASmin):                               33.750 ns
Minimum CAS Write Latency Time (tCWLmin):                                       10.000 ns
Minimum Write Recovery Time (tWRmin):                                           28.750 ns
Minimum Active to Active/Refresh Delay Time (tRCmin):                           46.250 ns
Maximum tREFI Time (Average Periodic Refresh Interval):                         7.750 us
Minimum Refresh Recovery Delay Time (tRFCmin):                                  260.000 ns
Minimum Internal Read to Precharge Command Delay Time (tRTPmin):                7.500 ns
Minimum Row Active to Row Active Delay Time (tRRDmin):                          6.250 ns
Minimum Four Activate Window Delay Time (tFAWmin):                              30.0 ns
Minimum Internal Write to Read Command Delay Time (tWTRmin):                    7.500 ns
Supported Module Timing at 800.0 MHz:                                           10-10-10-27
Read to Write CMD Turn-around Time Optimization:                                No adjustment
Write to Read CMD Turn-around Time Optimization:                                No adjustment
Back 2 Back CMD Turn-around Time Optimization:                                  No adjustment
System Command Rate Mode:                                                       2N