比较文本

查找两个文本文件之间的差异

显示

视图

实时编辑器隐藏空白更改折叠未更改行关闭换行

比对精度

语法

处理

Diffchecker Desktop 运行Diffchecker最安全的方式。获取Diffchecker桌面应用：您的差异永远不会离开您的电脑！获取桌面版

RAM Check

创建于 6年前差异永不过期

22 删除

行
总计
删除

字符
总计
删除

要继续使用此功能，请升级到 Diffchecker Pro 查看价格

84 行

21 添加

行
总计
添加

字符
总计
添加

要继续使用此功能，请升级到 Diffchecker Pro 查看价格

84 行

General Module Information

Module Number: 2

Module Number: 1

Module Size: 8 GBytes

Memory Type: DDR3 SDRAM

Module Type: Unbuffered DIMM (UDIMM)

Memory Speed: 800.0 MHz (DDR3-1600 / PC3-12800)

Module Manufacturer: Corsair

Module Part Number: CMZ16GX3M2A1600C10

Module Part Number: CML16GX3M2A1600C10

Module Revision: 0

Module Serial Number: 0

Module Manufacturing Date: Year: 2000, Week: 0

Module Manufacturing Date: Year: 200c, Week: 1e

Module Manufacturing Location: 1

SDRAM Manufacturer: Unknown

Error Check/Correction: None

Module characteristics

Row Address Bits: 16

Column Address Bits: 10

Number Of Banks: 8

Module Density: 4096 Mb

Number Of Ranks: 2

Device Width: 8 bits

Bus Width: 64 bits

Module Nominal Voltage (VDD): 1.5 V

Module timing

Minimum SDRAM Cycle Time (tCKmin): 1.250 ns

Minimum SDRAM Cycle Time (tCKmin): 1.500 ns

CAS# Latencies Supported: 6, 7, 9, 10

CAS# Latencies Supported: 5, 6, 8, 9

Minimum CAS# Latency Time (tAAmin): 12.500 ns

Minimum CAS# Latency Time (tAAmin): 13.125 ns

Minimum RAS# to CAS# Delay (tRCDmin): 12.500 ns

Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns

Minimum Row Precharge Time (tRPmin): 12.500 ns

Minimum Row Precharge Time (tRPmin): 13.125 ns

Minimum Active to Precharge Time (tRASmin): 33.750 ns

Minimum Active to Precharge Time (tRASmin): 36.000 ns

Supported Module Timing at 800.0 MHz: 10-10-10-27

Supported Module Timing at 666.7 MHz: 9-9-9-24

Supported Module Timing at 666.7 MHz: 9-9-9-23

Supported Module Timing at 400.0 MHz: 6-6-6-15

Supported Module Timing at 533.3 MHz: 7-7-7-18

Supported Module Timing at 333.3 MHz: 5-5-5-12

Minimum Write Recovery Time (tWRmin): 15.000 ns

Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns

Minimum Active to Active/Refresh Time (tRCmin): 48.125 ns

Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns

Minimum Refresh Recovery Time Delay (tRFCmin): 260.000 ns

Minimum Refresh Recovery Time Delay (tRFCmin): 300.000 ns

Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns

Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns

Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns

Features

Partial Array Self Refresh (PASR): Supported

On-die Thermal Sensor (ODTS) Readout: Not Supported

Auto Self Refresh (ASR): Not Supported

Extended Temperature 1X Refresh Rate: Not Supported

Extended Temperature Range: Supported

Module Temperature Sensor: Not Supported

Pseudo Target Row Refresh (pTRR): Not Supported

Module Nominal Height: 29 - 30 mm

Module Maximum Thickness (Front): 2 - 3 mm

Module Maximum Thickness (Back): 2 - 3 mm

Intel Extreme Memory Profile (XMP)

XMP Revision: 1.3

Enthusiast / Certified Profile [Enabled]

Module VDD Voltage Level: 1.50 V

Memory Controller Voltage Level: 1.20 V

CAS# Latencies Supported: 6, 10

Minimum SDRAM Cycle Time (tCKmin): 1.250 ns (800.0 MHz)

Minimum CAS Latency Time (tAAmin): 12.500 ns

Minimum RAS# to CAS# Delay Time (tRCDmin): 12.500 ns

Minimum Row Precharge Delay Time (tRPmin): 12.500 ns

Minimum Active to Precharge Delay Time (tRASmin): 33.750 ns

Minimum CAS Write Latency Time (tCWLmin): 10.000 ns

Minimum Write Recovery Time (tWRmin): 15.000 ns

Minimum Write Recovery Time (tWRmin): 28.750 ns

Minimum Active to Active/Refresh Delay Time (tRCmin): 50.625 ns

Minimum Active to Active/Refresh Delay Time (tRCmin): 46.250 ns

Maximum tREFI Time (Average Periodic Refresh Interval): 7.750 us

Minimum Refresh Recovery Delay Time (tRFCmin): 260.000 ns

Minimum Internal Read to Precharge Command Delay Time (tRTPmin): 7.500 ns

Minimum Row Active to Row Active Delay Time (tRRDmin): 7.500 ns

Minimum Row Active to Row Active Delay Time (tRRDmin): 6.250 ns

Minimum Four Activate Window Delay Time (tFAWmin): 37.5 ns

Minimum Four Activate Window Delay Time (tFAWmin): 30.0 ns

Minimum Internal Write to Read Command Delay Time (tWTRmin): 7.500 ns

Supported Module Timing at 800.0 MHz: 10-10-10-27

Read to Write CMD Turn-around Time Optimization: No adjustment

Write to Read CMD Turn-around Time Optimization: No adjustment

Back 2 Back CMD Turn-around Time Optimization: No adjustment

System Command Rate Mode: 2N

已保存差异

原始文本

打开文件

General Module Information                                                      
Module Number:                                                                  2
Module Size:                                                                    8 GBytes
Memory Type:                                                                    DDR3 SDRAM
Module Type:                                                                    Unbuffered DIMM (UDIMM)
Memory Speed:                                                                   800.0 MHz (DDR3-1600 / PC3-12800)
Module Manufacturer:                                                            Corsair
Module Part Number:                                                             CMZ16GX3M2A1600C10
Module Revision:                                                                0
Module Serial Number:                                                           0
Module Manufacturing Date:                                                      Year: 2000, Week: 0
Module Manufacturing Location:                                                  1
SDRAM Manufacturer:                                                             Unknown
Error Check/Correction:                                                         None

Module characteristics                                                          
Row Address Bits:                                                               16
Column Address Bits:                                                            10
Number Of Banks:                                                                8
Module Density:                                                                 4096 Mb
Number Of Ranks:                                                                2
Device Width:                                                                   8 bits
Bus Width:                                                                      64 bits
Module Nominal Voltage (VDD):                                                   1.5 V

Module timing                                                                   
Minimum SDRAM Cycle Time (tCKmin):                                              1.250 ns
CAS# Latencies Supported:                                                       6, 7, 9, 10
Minimum CAS# Latency Time (tAAmin):                                             12.500 ns
Minimum RAS# to CAS# Delay (tRCDmin):                                           12.500 ns
Minimum Row Precharge Time (tRPmin):                                            12.500 ns
Minimum Active to Precharge Time (tRASmin):                                     33.750 ns

Supported Module Timing at 800.0 MHz:                                           10-10-10-27
Supported Module Timing at 666.7 MHz:                                           9-9-9-23
Supported Module Timing at 533.3 MHz:                                           7-7-7-18

Minimum Write Recovery Time (tWRmin):                                           15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin):                               6.000 ns
Minimum Active to Active/Refresh Time (tRCmin):                                 48.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin):                                  260.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin):                         7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin):                     7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin):                              30.000 ns

Features                                                                        
Partial Array Self Refresh (PASR):                                              Supported
On-die Thermal Sensor (ODTS) Readout:                                           Not Supported
Auto Self Refresh (ASR):                                                        Not Supported
Extended Temperature 1X Refresh Rate:                                           Not Supported
Extended Temperature Range:                                                     Supported
Module Temperature Sensor:                                                      Not Supported
Pseudo Target Row Refresh (pTRR):                                               Not Supported
Module Nominal Height:                                                          29 - 30 mm
Module Maximum Thickness (Front):                                               2 - 3 mm
Module Maximum Thickness (Back):                                                2 - 3 mm

Intel Extreme Memory Profile (XMP)                                              
XMP Revision:                                                                   1.3

Enthusiast / Certified Profile [Enabled]                                        
Module VDD Voltage Level:                                                       1.50 V
Memory Controller Voltage Level:                                                1.20 V
CAS# Latencies Supported:                                                       6, 10
Minimum SDRAM Cycle Time (tCKmin):                                              1.250 ns (800.0 MHz)
Minimum CAS Latency Time (tAAmin):                                              12.500 ns
Minimum RAS# to CAS# Delay Time (tRCDmin):                                      12.500 ns
Minimum Row Precharge Delay Time (tRPmin):                                      12.500 ns
Minimum Active to Precharge Delay Time (tRASmin):                               33.750 ns
Minimum CAS Write Latency Time (tCWLmin):                                       10.000 ns
Minimum Write Recovery Time (tWRmin):                                           15.000 ns
Minimum Active to Active/Refresh Delay Time (tRCmin):                           50.625 ns
Maximum tREFI Time (Average Periodic Refresh Interval):                         7.750 us
Minimum Refresh Recovery Delay Time (tRFCmin):                                  260.000 ns
Minimum Internal Read to Precharge Command Delay Time (tRTPmin):                7.500 ns
Minimum Row Active to Row Active Delay Time (tRRDmin):                          7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin):                              37.5 ns
Minimum Internal Write to Read Command Delay Time (tWTRmin):                    7.500 ns
Supported Module Timing at 800.0 MHz:                                           10-10-10-27
Read to Write CMD Turn-around Time Optimization:                                No adjustment
Write to Read CMD Turn-around Time Optimization:                                No adjustment
Back 2 Back CMD Turn-around Time Optimization:                                  No adjustment
System Command Rate Mode:                                                       2N

更改后文本

打开文件

General Module Information                                                      
Module Number:                                                                  1
Module Size:                                                                    8 GBytes
Memory Type:                                                                    DDR3 SDRAM
Module Type:                                                                    Unbuffered DIMM (UDIMM)
Memory Speed:                                                                   800.0 MHz (DDR3-1600 / PC3-12800)
Module Manufacturer:                                                            Corsair
Module Part Number:                                                             CML16GX3M2A1600C10
Module Revision:                                                                0
Module Serial Number:                                                           0
Module Manufacturing Date:                                                      Year: 200c, Week: 1e
Module Manufacturing Location:                                                  1
SDRAM Manufacturer:                                                             Unknown
Error Check/Correction:                                                         None

Module timing                                                                   
Minimum SDRAM Cycle Time (tCKmin):                                              1.500 ns
CAS# Latencies Supported:                                                       5, 6, 8, 9
Minimum CAS# Latency Time (tAAmin):                                             13.125 ns
Minimum RAS# to CAS# Delay (tRCDmin):                                           13.125 ns
Minimum Row Precharge Time (tRPmin):                                            13.125 ns
Minimum Active to Precharge Time (tRASmin):                                     36.000 ns

Supported Module Timing at 666.7 MHz:                                           9-9-9-24
Supported Module Timing at 400.0 MHz:                                           6-6-6-15
Supported Module Timing at 333.3 MHz:                                           5-5-5-12

Minimum Write Recovery Time (tWRmin):                                           15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin):                               6.000 ns
Minimum Active to Active/Refresh Time (tRCmin):                                 49.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin):                                  300.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin):                         7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin):                     7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin):                              30.000 ns

Intel Extreme Memory Profile (XMP)                                              
XMP Revision:                                                                   1.3

Enthusiast / Certified Profile [Enabled]                                        
Module VDD Voltage Level:                                                       1.50 V
Memory Controller Voltage Level:                                                1.20 V
CAS# Latencies Supported:                                                       6, 10
Minimum SDRAM Cycle Time (tCKmin):                                              1.250 ns (800.0 MHz)
Minimum CAS Latency Time (tAAmin):                                              12.500 ns
Minimum RAS# to CAS# Delay Time (tRCDmin):                                      12.500 ns
Minimum Row Precharge Delay Time (tRPmin):                                      12.500 ns
Minimum Active to Precharge Delay Time (tRASmin):                               33.750 ns
Minimum CAS Write Latency Time (tCWLmin):                                       10.000 ns
Minimum Write Recovery Time (tWRmin):                                           28.750 ns
Minimum Active to Active/Refresh Delay Time (tRCmin):                           46.250 ns
Maximum tREFI Time (Average Periodic Refresh Interval):                         7.750 us
Minimum Refresh Recovery Delay Time (tRFCmin):                                  260.000 ns
Minimum Internal Read to Precharge Command Delay Time (tRTPmin):                7.500 ns
Minimum Row Active to Row Active Delay Time (tRRDmin):                          6.250 ns
Minimum Four Activate Window Delay Time (tFAWmin):                              30.0 ns
Minimum Internal Write to Read Command Delay Time (tWTRmin):                    7.500 ns
Supported Module Timing at 800.0 MHz:                                           10-10-10-27
Read to Write CMD Turn-around Time Optimization:                                No adjustment
Write to Read CMD Turn-around Time Optimization:                                No adjustment
Back 2 Back CMD Turn-around Time Optimization:                                  No adjustment
System Command Rate Mode:                                                       2N