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Diffchecker Desktop
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RAM Check
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General Module Information
General Module Information
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Module Number:
2
Module Number:
1
Module Size: 8 GBytes
Module Size: 8 GBytes
Memory Type: DDR3 SDRAM
Memory Type: DDR3 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 800.0 MHz (DDR3-1600 / PC3-12800)
Memory Speed: 800.0 MHz (DDR3-1600 / PC3-12800)
Module Manufacturer: Corsair
Module Manufacturer: Corsair
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Module Part Number: CM
Z
16GX3M2A1600C10
Module Part Number: CM
L
16GX3M2A1600C10
Module Revision: 0
Module Revision: 0
Module Serial Number: 0
Module Serial Number: 0
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Module Manufacturing Date: Year: 200
0
, Week:
0
Module Manufacturing Date: Year: 200
c
, Week:
1e
Module Manufacturing Location: 1
Module Manufacturing Location: 1
SDRAM Manufacturer: Unknown
SDRAM Manufacturer: Unknown
Error Check/Correction: None
Error Check/Correction: None
Module characteristics
Module characteristics
Row Address Bits: 16
Row Address Bits: 16
Column Address Bits: 10
Column Address Bits: 10
Number Of Banks: 8
Number Of Banks: 8
Module Density: 4096 Mb
Module Density: 4096 Mb
Number Of Ranks: 2
Number Of Ranks: 2
Device Width: 8 bits
Device Width: 8 bits
Bus Width: 64 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
Module Nominal Voltage (VDD): 1.5 V
Module timing
Module timing
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Minimum SDRAM Cycle Time (tCKmin): 1.
250
ns
Minimum SDRAM Cycle Time (tCKmin): 1.
500
ns
CAS# Latencies Supported:
6,
7
, 9
, 10
CAS# Latencies Supported:
5,
6,
8
, 9
Minimum CAS# Latency Time (tAAmin):
12.500
ns
Minimum CAS# Latency Time (tAAmin):
13.125
ns
Minimum RAS# to CAS# Delay (tRCDmin):
12.500
ns
Minimum RAS# to CAS# Delay (tRCDmin):
13.125
ns
Minimum Row Precharge Time (tRPmin):
12.500
ns
Minimum Row Precharge Time (tRPmin):
13.125
ns
Minimum Active to Precharge Time (tRASmin):
33.750
ns
Minimum Active to Precharge Time (tRASmin):
36.000
ns
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Supported Module Timing at 800.0 MHz: 10-10-10-27
Supported Module Timing at 666.7 MHz: 9-9-9-
24
Supported Module Timing at 666.7 MHz: 9-9-9-
23
Supported Module Timing at
400.0 MHz: 6-6-6-15
Supported Module Timing at
533
.3 MHz:
7-7-7-18
Supported Module Timing at 333
.3 MHz:
5-5-5-12
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
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Minimum Active to Active/Refresh Time (tRCmin):
48
.125 ns
Minimum Active to Active/Refresh Time (tRCmin):
49
.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin):
260
.000 ns
Minimum Refresh Recovery Time Delay (tRFCmin):
300
.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
Features
Features
Partial Array Self Refresh (PASR): Supported
Partial Array Self Refresh (PASR): Supported
On-die Thermal Sensor (ODTS) Readout: Not Supported
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Not Supported
Auto Self Refresh (ASR): Not Supported
Extended Temperature 1X Refresh Rate: Not Supported
Extended Temperature 1X Refresh Rate: Not Supported
Extended Temperature Range: Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Module Temperature Sensor: Not Supported
Pseudo Target Row Refresh (pTRR): Not Supported
Pseudo Target Row Refresh (pTRR): Not Supported
Module Nominal Height: 29 - 30 mm
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 2 - 3 mm
Module Maximum Thickness (Front): 2 - 3 mm
Module Maximum Thickness (Back): 2 - 3 mm
Module Maximum Thickness (Back): 2 - 3 mm
Intel Extreme Memory Profile (XMP)
Intel Extreme Memory Profile (XMP)
XMP Revision: 1.3
XMP Revision: 1.3
Enthusiast / Certified Profile [Enabled]
Enthusiast / Certified Profile [Enabled]
Module VDD Voltage Level: 1.50 V
Module VDD Voltage Level: 1.50 V
Memory Controller Voltage Level: 1.20 V
Memory Controller Voltage Level: 1.20 V
CAS# Latencies Supported: 6, 10
CAS# Latencies Supported: 6, 10
Minimum SDRAM Cycle Time (tCKmin): 1.250 ns (800.0 MHz)
Minimum SDRAM Cycle Time (tCKmin): 1.250 ns (800.0 MHz)
Minimum CAS Latency Time (tAAmin): 12.500 ns
Minimum CAS Latency Time (tAAmin): 12.500 ns
Minimum RAS# to CAS# Delay Time (tRCDmin): 12.500 ns
Minimum RAS# to CAS# Delay Time (tRCDmin): 12.500 ns
Minimum Row Precharge Delay Time (tRPmin): 12.500 ns
Minimum Row Precharge Delay Time (tRPmin): 12.500 ns
Minimum Active to Precharge Delay Time (tRASmin): 33.750 ns
Minimum Active to Precharge Delay Time (tRASmin): 33.750 ns
Minimum CAS Write Latency Time (tCWLmin): 10.000 ns
Minimum CAS Write Latency Time (tCWLmin): 10.000 ns
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Minimum Write Recovery Time (tWRmin):
15.000
ns
Minimum Write Recovery Time (tWRmin):
28.750
ns
Minimum Active to Active/Refresh Delay Time (tRCmin):
50.625
ns
Minimum Active to Active/Refresh Delay Time (tRCmin):
46.250
ns
Maximum tREFI Time (Average Periodic Refresh Interval): 7.750 us
Maximum tREFI Time (Average Periodic Refresh Interval): 7.750 us
Minimum Refresh Recovery Delay Time (tRFCmin): 260.000 ns
Minimum Refresh Recovery Delay Time (tRFCmin): 260.000 ns
Minimum Internal Read to Precharge Command Delay Time (tRTPmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay Time (tRTPmin): 7.500 ns
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Minimum Row Active to Row Active Delay Time (tRRDmin):
7.500
ns
Minimum Row Active to Row Active Delay Time (tRRDmin):
6.250
ns
Minimum Four Activate Window Delay Time (tFAWmin):
37.5
ns
Minimum Four Activate Window Delay Time (tFAWmin):
30.0
ns
Minimum Internal Write to Read Command Delay Time (tWTRmin): 7.500 ns
Minimum Internal Write to Read Command Delay Time (tWTRmin): 7.500 ns
Supported Module Timing at 800.0 MHz: 10-10-10-27
Supported Module Timing at 800.0 MHz: 10-10-10-27
Read to Write CMD Turn-around Time Optimization: No adjustment
Read to Write CMD Turn-around Time Optimization: No adjustment
Write to Read CMD Turn-around Time Optimization: No adjustment
Write to Read CMD Turn-around Time Optimization: No adjustment
Back 2 Back CMD Turn-around Time Optimization: No adjustment
Back 2 Back CMD Turn-around Time Optimization: No adjustment
System Command Rate Mode: 2N
System Command Rate Mode: 2N
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General Module Information Module Number: 2 Module Size: 8 GBytes Memory Type: DDR3 SDRAM Module Type: Unbuffered DIMM (UDIMM) Memory Speed: 800.0 MHz (DDR3-1600 / PC3-12800) Module Manufacturer: Corsair Module Part Number: CMZ16GX3M2A1600C10 Module Revision: 0 Module Serial Number: 0 Module Manufacturing Date: Year: 2000, Week: 0 Module Manufacturing Location: 1 SDRAM Manufacturer: Unknown Error Check/Correction: None Module characteristics Row Address Bits: 16 Column Address Bits: 10 Number Of Banks: 8 Module Density: 4096 Mb Number Of Ranks: 2 Device Width: 8 bits Bus Width: 64 bits Module Nominal Voltage (VDD): 1.5 V Module timing Minimum SDRAM Cycle Time (tCKmin): 1.250 ns CAS# Latencies Supported: 6, 7, 9, 10 Minimum CAS# Latency Time (tAAmin): 12.500 ns Minimum RAS# to CAS# Delay (tRCDmin): 12.500 ns Minimum Row Precharge Time (tRPmin): 12.500 ns Minimum Active to Precharge Time (tRASmin): 33.750 ns Supported Module Timing at 800.0 MHz: 10-10-10-27 Supported Module Timing at 666.7 MHz: 9-9-9-23 Supported Module Timing at 533.3 MHz: 7-7-7-18 Minimum Write Recovery Time (tWRmin): 15.000 ns Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns Minimum Active to Active/Refresh Time (tRCmin): 48.125 ns Minimum Refresh Recovery Time Delay (tRFCmin): 260.000 ns Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns Features Partial Array Self Refresh (PASR): Supported On-die Thermal Sensor (ODTS) Readout: Not Supported Auto Self Refresh (ASR): Not Supported Extended Temperature 1X Refresh Rate: Not Supported Extended Temperature Range: Supported Module Temperature Sensor: Not Supported Pseudo Target Row Refresh (pTRR): Not Supported Module Nominal Height: 29 - 30 mm Module Maximum Thickness (Front): 2 - 3 mm Module Maximum Thickness (Back): 2 - 3 mm Intel Extreme Memory Profile (XMP) XMP Revision: 1.3 Enthusiast / Certified Profile [Enabled] Module VDD Voltage Level: 1.50 V Memory Controller Voltage Level: 1.20 V CAS# Latencies Supported: 6, 10 Minimum SDRAM Cycle Time (tCKmin): 1.250 ns (800.0 MHz) Minimum CAS Latency Time (tAAmin): 12.500 ns Minimum RAS# to CAS# Delay Time (tRCDmin): 12.500 ns Minimum Row Precharge Delay Time (tRPmin): 12.500 ns Minimum Active to Precharge Delay Time (tRASmin): 33.750 ns Minimum CAS Write Latency Time (tCWLmin): 10.000 ns Minimum Write Recovery Time (tWRmin): 15.000 ns Minimum Active to Active/Refresh Delay Time (tRCmin): 50.625 ns Maximum tREFI Time (Average Periodic Refresh Interval): 7.750 us Minimum Refresh Recovery Delay Time (tRFCmin): 260.000 ns Minimum Internal Read to Precharge Command Delay Time (tRTPmin): 7.500 ns Minimum Row Active to Row Active Delay Time (tRRDmin): 7.500 ns Minimum Four Activate Window Delay Time (tFAWmin): 37.5 ns Minimum Internal Write to Read Command Delay Time (tWTRmin): 7.500 ns Supported Module Timing at 800.0 MHz: 10-10-10-27 Read to Write CMD Turn-around Time Optimization: No adjustment Write to Read CMD Turn-around Time Optimization: No adjustment Back 2 Back CMD Turn-around Time Optimization: No adjustment System Command Rate Mode: 2N
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General Module Information Module Number: 1 Module Size: 8 GBytes Memory Type: DDR3 SDRAM Module Type: Unbuffered DIMM (UDIMM) Memory Speed: 800.0 MHz (DDR3-1600 / PC3-12800) Module Manufacturer: Corsair Module Part Number: CML16GX3M2A1600C10 Module Revision: 0 Module Serial Number: 0 Module Manufacturing Date: Year: 200c, Week: 1e Module Manufacturing Location: 1 SDRAM Manufacturer: Unknown Error Check/Correction: None Module characteristics Row Address Bits: 16 Column Address Bits: 10 Number Of Banks: 8 Module Density: 4096 Mb Number Of Ranks: 2 Device Width: 8 bits Bus Width: 64 bits Module Nominal Voltage (VDD): 1.5 V Module timing Minimum SDRAM Cycle Time (tCKmin): 1.500 ns CAS# Latencies Supported: 5, 6, 8, 9 Minimum CAS# Latency Time (tAAmin): 13.125 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns Minimum Row Precharge Time (tRPmin): 13.125 ns Minimum Active to Precharge Time (tRASmin): 36.000 ns Supported Module Timing at 666.7 MHz: 9-9-9-24 Supported Module Timing at 400.0 MHz: 6-6-6-15 Supported Module Timing at 333.3 MHz: 5-5-5-12 Minimum Write Recovery Time (tWRmin): 15.000 ns Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns Minimum Refresh Recovery Time Delay (tRFCmin): 300.000 ns Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns Features Partial Array Self Refresh (PASR): Supported On-die Thermal Sensor (ODTS) Readout: Not Supported Auto Self Refresh (ASR): Not Supported Extended Temperature 1X Refresh Rate: Not Supported Extended Temperature Range: Supported Module Temperature Sensor: Not Supported Pseudo Target Row Refresh (pTRR): Not Supported Module Nominal Height: 29 - 30 mm Module Maximum Thickness (Front): 2 - 3 mm Module Maximum Thickness (Back): 2 - 3 mm Intel Extreme Memory Profile (XMP) XMP Revision: 1.3 Enthusiast / Certified Profile [Enabled] Module VDD Voltage Level: 1.50 V Memory Controller Voltage Level: 1.20 V CAS# Latencies Supported: 6, 10 Minimum SDRAM Cycle Time (tCKmin): 1.250 ns (800.0 MHz) Minimum CAS Latency Time (tAAmin): 12.500 ns Minimum RAS# to CAS# Delay Time (tRCDmin): 12.500 ns Minimum Row Precharge Delay Time (tRPmin): 12.500 ns Minimum Active to Precharge Delay Time (tRASmin): 33.750 ns Minimum CAS Write Latency Time (tCWLmin): 10.000 ns Minimum Write Recovery Time (tWRmin): 28.750 ns Minimum Active to Active/Refresh Delay Time (tRCmin): 46.250 ns Maximum tREFI Time (Average Periodic Refresh Interval): 7.750 us Minimum Refresh Recovery Delay Time (tRFCmin): 260.000 ns Minimum Internal Read to Precharge Command Delay Time (tRTPmin): 7.500 ns Minimum Row Active to Row Active Delay Time (tRRDmin): 6.250 ns Minimum Four Activate Window Delay Time (tFAWmin): 30.0 ns Minimum Internal Write to Read Command Delay Time (tWTRmin): 7.500 ns Supported Module Timing at 800.0 MHz: 10-10-10-27 Read to Write CMD Turn-around Time Optimization: No adjustment Write to Read CMD Turn-around Time Optimization: No adjustment Back 2 Back CMD Turn-around Time Optimization: No adjustment System Command Rate Mode: 2N
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